NTE239 Silicon Controlled Switch (SCS)
Description: The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for a numerical indicator tube and switching applications. Features: D Selective Breakover Voltage D Low ON Voltage Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO NPN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V PNP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -70V Collector-Emitter Voltage (NPN Only, RBE = 10k), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector-Emitter Voltage (PNP), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -70V Emitter-Base Voltage, VEBO NPN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V PNP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -70V Emitter Current, IE NPN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -100mA PNP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak Emitter Current (tp 1ms, = 0.05), IEM NPN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -500mA PNP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Collector Current (NPN Only), IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +175C
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter NPN Transistor Collector Cutoff Current Emitter Cutoff Current DC Current Gain PNP Transistor Emitter Cutoff Current DC Current Gain Combined Device Anode-Cathode Voltage Holding Current Turn-Off Time VAK IH toff IA = 50mA, IC = 0, RBE = 10k RBE = 10k, IC = 10mA, -VBB = 2V RBE = 10k - 0.1 - 1.05 0.5 6 1.4 1.0 12 V mA s -IEBO hFE -VEB = 70V, IC = 0 VCB = 0, IE = 1mA - 0.72 0.05 - 100 2.5 nA ICER IEBO hFE VCE = 70V, RBE = 10k VEB = 5V, IC = 0 VCE = 2V, IC = 10mA - - 50 10 30 180 100 1000 - nA nA Symbol Test Conditions Min Typ Max Unit
.220 (5.58) Dia 4 .185 (4.7) Dia Emitter (PNP) 3 .190 (4.82) Base (PNP)/ Collector (NPN) 2 .030 (.762) Collector (PNP)/ Base (NPN) Emitter (NPN) .500 (12.7) Min 1 Transistor Basing
4 Anode .018 (0.45) Dia 3 2 1 2 3 Cathode/Gate Anode/Gate
Cathode 45 1 Thyristor Basing 4 .040 (1.02)
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